gaas spdt 2.7 v high power switch dc - 3.0 ghz rev. v3 maswss0117 1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? low voltage operation: 2.7 v ? high ip3: +56 dbm ? low insertion loss: 0.30 db at 1 ghz ? high isolation: 25 db at 1 ghz ? sc70 6-lead package ? 0.5 micron gaas phemt process description the maswss0117 is a gaas phemt mmic single pole double throw (spdt) high power switch in a low cost sc70 6-lead package. the maswss0117 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. typical applications are for cdma handset systems that connect separate transceiver and/or gps functions to a common antenna, as well as other related handset and general purpose applications. the maswss0117 can be used in all systems operating up to 3.0 ghz requiring high power at low control voltage. the maswss0117 is fabricated using a 0.5 micron gate length gaas phemt process. the process features full passivation for performance and reliability. functional block diagram pin configuration pin no. pin name description 1 v2 vcontrol 2 2 rfc rf common 3 v1 vcontrol 1 4 rf1 rf port 1 5 gnd rf ground 6 rf2 rf port 2 ordering information 1 part number package maswss0117 bulk packaging maswss0117tr 1000 piece reel maswss0117tr-3000 3000 piece reel maswss0117smb sample test board 1. reference application note m513 for reel size information. maswss0117 orientation in tape maswss0117 device marking
gaas spdt 2.7 v high power switch dc - 3.0 ghz rev. v3 maswss0117 2 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. electrical specifications: t a = 25c, v c = 0 v / 2.7 v, z 0 = 50 ? 2 2. for positive voltage control, external dc bl ocking capacitors are required on all rf ports. 3. insertion loss can be optimized by varying the dc blocking capac itor value, e.g. 1000 pf for 100 mhz - 1 ghz, 39 pf for 0.5 - 3 ghz. parameter test conditions units min. typ. max. insertion loss 3 dc - 1 ghz 1 - 2 ghz 2 - 3 ghz db ? ? ? 0.30 0.35 0.35 0.65 ? ? isolation dc - 1 ghz 1 - 2 ghz 2 - 3 ghz db 23 ? ? 25 19 15 ? ? ? return loss dc - 3 ghz db ? 20 ? ip3 825 mhz two tone, +24 dbm total pin, 5 mhz spacing dbm ? 56 ? cross modulation for cell band: two-tone signal input: tx1 = +22 dbm @ 820 mhz, tx2 = +22 dbm @ 821 mhz, rx interfere = -23 dbm @ 869 mhz. dbm ? -99 ? for pcs band: two-tone signal input: tx1 = +18 dbm @ 1880 mhz, tx2 = +18 dbm @ 1881 mhz, rx interfere = -23 dbm @ 1960 mhz. dbm ? -94 ? p0.1db 1.0 ghz dbm ? 38 ? trise, tfall 10% to 90% rf, 90% to 10% rf ns ? 70 ? ton, toff 50% control to 90% rf 50% control to 10% rf ns ? 100 ? transients in band mv ? 25 ? control current v c = 2.7 v a ? 5 20 truth table 6,7,8 6. for positive voltage control, external dc blocking capacitors are required on all rf ports. 7. differential voltage, v (state 1) - v (state 0), must be +2.7 v minimum, but must not exceed 8.5 v. 8. 0 = -5 v to +2.3 v, 1 = -2.3 v to +5 v. v1 v2 ant? rf1 ant - rf2 1 0 on off 0 1 off on absolute maximum ratings 4,5 parameter absolute maximum input power (0.5 - 3 ghz, 3 v control) +38 dbm operating voltage +8.5 volts operating temperature -40c to +85c storage temperature -65c to +150c 4. exceeding any one or combination of these limits may cause permanent damage to this device. 5. m/a-com does not recommend sustained operation near these survivability limits.
gaas spdt 2.7 v high power switch dc - 3.0 ghz rev. v3 maswss0117 3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. sc-70 plastic package ? qualification qualified to m/a-com specification rel-201, process flow ?2. handling procedures please observe the following precautions to avoid damage: static sensitivity gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. ? meets jedec moisture sensitivity level 1 requirements. typical performance curves vs. frequency, 39 pf isolation insertion loss return loss -35 -30 -25 -20 -15 -10 -5 0 0123456 +25c -40c +85c frequency (ghz) 0 10 20 30 40 0.5 1.0 1.5 2.0 2.5 3.0 +25c +85c -40c frequency (ghz) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.5 1.0 1.5 2.0 2.5 3.0 +25c +85c -40c frequency (ghz)
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